? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c110 t c = 110c 48 a i cm t c = 25c, 1ms 300 a ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 96 a (rbsoa) clamped inductive load @ 600v p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6.0 g ds99926a(07/08) IXGH48N60A3D1 g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 300 a v ge = 0v t j = 125c 1.75 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 32a, v ge = 15v, note 1 1.18 1.35 v v ces = 600v i c110 = 48a v ce(sat) 1.35v to-247 (ixgh) g c e c (tab) genx3 tm 600v igbt with diode ultra low vsat pt igbt for up to 5khz switching features z optimized for low conduction losses z square rbsoa z anti-parallel ultra fast diode z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits
ixys reserves the right to change limits, test conditions and dimensions. IXGH48N60A3D1 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 32a, v ce = 10v, note 1 30 48 s c ies 3190 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 175 pf c res 43 pf q g 110 nc q ge i c = 32a, v ge = 15v, v ce = 0.5 ? v ces 21 nc q gc 42 nc t d(on) 25 ns t ri 30 ns e on 0.95 mj t d(off) 334 ns t fi 224 ns e off 2.9 mj t d(on) 24 ns t ri 30 ns e on 1.97 mj t d(off) 545 ns t fi 380 ns e off 5.6 mj r thjc 0.42 c/w r thcs 0.21 c/w note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline inductive load, t j = 25c i c = 32a, v ge = 15v v ce = 480v, r g = 5 inductive load, t j = 125c i c = 32a, v ge = 15v v ce = 480v, r g = 5 reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 30a, v ge = 0v, note 1 3.0 v t j = 150 c 1.6 v i rm i f = 30a, v ge = 0v, t j = 100 c 4 a t rr -di f /dt = 100a/ s , v r = 100v t j = 100 c 100 ns i f = 1a, -di/dt = 100a/ s, v r = 30v 25 ns r thjc 0.9 c /w
? 2008 ixys corporation, all rights reserved IXGH48N60A3D1 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 330 02468101214 v ce - volts i c - amperes v ge = 15v 13v 7v 11v 9v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 64a i c = 32a i c = 16a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 64a 32a 16a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. IXGH48N60A3D1 fig. 7. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 5 dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60 70 80 90 100 110 120 q g - nanocoulombs v ge - volts v ce = 300v i c = 32a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_48n60a3(56) 7-10-08-a
? 2008 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 0 2 4 6 8 10 12 14 10 12 14 16 18 20 22 24 26 28 30 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 32a i c = 64a i c = 16a fig. 15. inductive turn-off switching times vs. gate resistance 340 360 380 400 420 440 460 480 500 520 0 3 6 9 12151821242730 r g - ohms t f - nanoseconds 400 450 500 550 600 650 700 750 800 850 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 64a 16a 32a 16a 32a 64a fig. 13. inductive swiching energy loss vs. collector current 1 3 5 7 9 11 13 15 20 25 30 35 40 45 50 55 60 65 i c - amperes e off - millijoules 0 1 2 3 4 5 6 e on - millijoules e off e on - - - - r g = 5 , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive swiching energy loss vs. junction temperature 1 2 3 4 5 6 7 8 9 10 11 12 13 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 e on - millijoules e off e on - - - - r g = 5 , v ge = 15v v ce = 480v i c = 32a i c = 64a i c = 16a fig. 16. inductive turn-off switching times vs. collector current 150 200 250 300 350 400 450 500 15 20 25 30 35 40 45 50 55 60 65 i c - amperes t f - nanoseconds 300 350 400 450 500 550 600 650 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 17. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 80 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 21 22 23 24 25 26 27 28 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 , v ge = 15v v ce = 480v i c = 16a i c = 32a i c = 64a IXGH48N60A3D1
ixys reserves the right to change limits, test conditions and dimensions. IXGH48N60A3D1 ixys ref: g_48n60a3(56) 7-10-08-a fig. 20. inductive turn-off switching times vs. junction temperature 200 240 280 320 360 400 440 480 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 300 350 400 450 500 550 600 650 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 480v i c = 64a, 32a, 16a i c = 64a, 32a, 16a fig. 18. inductive turn-on switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 10 12 14 16 18 20 22 24 26 28 30 r g - ohms t r - nanoseconds 24 28 32 36 40 44 48 52 56 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 64a i c = 16a i c = 32a fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 15 20 25 30 35 40 45 50 55 60 65 i c - amperes t r - nanoseconds 21 22 23 24 25 26 27 28 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 , v ge = 15v v ce = 480v t j = 125oc t j = 25oc 25oc < t j < 125oc
? 2008 ixys corporation, all rights reserved i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 23. peak reverse current i rm versus -di f /dt fig. 22. reverse recovery charge q r versus -di f /dt fig. 21. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 24. dynamic parameters q r , i rm versus t vj fig. 25. recovery time t rr versus -di f /dt fig. 26. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 27. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 t vj =25c t vj =100c t vj =150c IXGH48N60A3D1 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06
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